Strained Silicon-on-Silicon by Wafer Bonding and Layer Transfer

Technology #10697

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Strained silicon-on-silicon by wafer bonding and layer transfer
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Inventors
Professor Eugene Fitzgerald
Department of Materials Science and Engineering, MIT
External Link (sauvignon.mit.edu)
David Isaacson
Department of Materials Science and Engineering, MIT
Managed By
Jim Freedman
MIT Technology Licensing Officer - Chemicals, Instruments, Consumer Products
Patent Protection

Strained silicon-on-silicon by wafer bonding and layer transfer

US Patent 7,495,266

Applications

Multi-layer fabrication method of semiconductor-based substrates for electronic devices.

Problem Addressed

Conventional, multi-layer silicon and germanium based substrates are complex to fabricate.  The presence of an oxide layer forces process modification and reduces thermal conductivity.

Technology

This invention proposes a structure that consists of two layers formed of the same semiconducting material (e.g. Si or Ge), but having different levels of strain. The two layers can be bonded directly one to the other to maintain a strain in at least one of the layers. Parallel to the interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer. High-performance transistors can be designed based on such a semiconductor-based structure.

Advantages

  • Elimination of undesirable strain-inducing layers found in prior substrates.