SiO2/Si3N4 CMOS Compatible Light Emitting Photonic Structures

Technology #10763

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FIG. 1 is a schematic diagram of a one-dimensional aperiodic structure in accordance with the concepts of the present invention.FIG. 2 illustrates various vertical aperiodic structures in accordance with the concepts of the present invention.FIG. 3 illustrates a vertical aperiodic structure with an embedded emitter in accordance with the concepts of the present invention.FIG. 4 illustrates coupled aperiodic structure in accordance with the concepts of the present invention.FIG. 5 illustrates a planar aperiodic waveguide in accordance with the concepts of the present invention.FIG. 6 illustrates an aperiodic cladding structure in accordance with the concepts of the present invention.FIG. 7 graphically illustrates transmission characteristics of Thue-Morse photonic structures constructed in accordance with the concepts of the present invention.FIG. 8 graphically illustrates a relationship between emission and annealing temperatures in accordance with the concepts of the present invention.
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Inventors
Professor Lionel Kimerling
Materials Science and Engineering, MIT
External Link (photonics.mit.edu)
Jurgen Michel
Microphotonics Center, MIT
External Link (photonics.mit.edu)
Luca Dal Negro
Jae Hyung Yi
Yasha Yi
Materials Processing Center, MIT
Victor Nguyen
Managed By
Dave Sossen
MIT Technology Licensing Officer
Patent Protection

CMOS-compatible light emitting aperiodic photonic structures

US Patent 7,407,896

Applications

Light emitting photonic structures, low threshold optical amplifiers, on chip optical sensors, optical switches and integrated non-linear optical device.

Problem Addressed

Standard multilayer approaches are able to produce good quality photonic structures, but do not activate efficient light emission from all the layer structure. There is therefore a strong need to address new material approaches able to produce intense light emission within a more flexible photonic design.

Technology

This invention is about realizing efficient light emitting photonic structures by using an entirely new material together with its fabrication method, which is applicable to both periodic photonic crystals and more complex non periodic photonic structures.  The approach relies entirely on thin film deposition of SiO2 and SiN4 thin films followed by thermal annealing treatments.  Light emission can be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. Within a fully VLSI-CMOS compatible annealing window it is possible to activate light emitting structures characterized by little absorption in the visible range. From these aperiodic structures, that can be obtained in different vertical and planar device geometries, the presence of aperiodic order in a photonic device provides strong group velocity reduction (slow photons) and enhanced light-matter interaction.

Advantages

  • Fully CMOS compatible process
  • Little absorption in the visible range and high efficiency
  • Strong broad band luminescence signal
  • Enhanced light emission and enhanced gain