Very Large Mode Slab-coupled Optical Waveguide Laser and Amplifier

Technology #13919

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FIG. 1 is a schematic diagram illustrating a VLM SCOWL formed in accordance of the inventionFIGS. 2A-2B are graphs illustrating the operational characteristics of a 980 nm VLM SCOWL formed in accordance with the invention;FIGS. 3A-3B are graphs illustrating the operational characteristics of a 1060 nm VLM SCOWL formed in accordance with the invention;FIG. 4 is a schematic diagram illustrating an alternative embodiment of the invention; andFIGS. 5A-5B are graphs illustrating the operational characteristics of a 1060 nm VLM SCOWL of FIG. 4.
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Inventors
Joseph Donnelly
Lincoln Laboratory
Robin Huang
Lincoln Laboratory
Managed By
Jack Turner
MIT Technology Licensing Officer
Patent Protection

Very large mode slab-coupled optical waveguide laser and amplifier

US Patent 8,451,874

A  novel design for a very large mode (VLM) slab-coupled optical waveguide laser (SCOWL) to increase its single spatial mode output power.

 Applications

Applications include materials processing, such as welding, drilling, cutting, annealing and brazing; laser pumping; free space optical communications; medical applications; and directed energy applications.

Problem Addressed

Scaling the spatial mode size to increase the output power of slab-coupled optical waveguide laser (SCOWL) is extremely difficult and can lead to mode collapse of the fundamental mode.

Technology

The invention is a very large mode (VLM) slab-coupled optical waveguide laser (SCOWL) which includes an upper waveguide region, lower waveguide region, and an active region positioned between them. The upper waveguide and lower waveguide regions are used for guiding the laser mode while the active region is arranged so etching into the VLM SCOWL is permitted to define the ridge waveguide structures, leaving the active region unetched. One or more mode control barrier layers are positioned adjacent to the active region. These mode control barrier layers are used to control the profile of the fundamental mode and prevent mode collapse of the laser mode.

Advantages

  • Improved peak power.
  • Increased and scalable output power.
  • Implementable in different material systems  (already Implemented in the InGaAs/AlGaAs/GaAs material system)