This technology reduces defect concentration and increases the photovoltaic efficiency of polycrystalline silicon and other semiconductors.
Defects within semiconductor crystal lattices can reduce PV efficiency, and producing single-crystal wafers and blocks is expensive and slow. This technology significantly boosts the performance of cheaper polycrystalline cells without significantly increasing costs.
Defects within the crystal lattice reduce carrier lifetimes so high defect concentrations can reduce semiconductor device performance. This is the case for photovoltaic cells. However, due to the high cost of single-crystal silicon, the efficiency of the solar cells are often sacrificed to reduce costs. This technology improves the performance of cheaper polycrystalline semiconductors through dislocation annihilation. Thermal, acoustic, or optical excitation of the wafer or block at the phonon frequencies
create atomic-level waves within the material. The waves move
dislocations toward each other so they can recombine or toward the surface of the material where they have less impact
on device performance. This treatment significantly reduces defect concentrations so the performance of polycrystalline semiconductors becomes comparable to high-quality monocrystalline materials.
- Improves performance of polycrystalline silicon and other semiconductors
- Compatible with current PV manufacturing processes