This organic semiconductor thin film transistor achieves
high voltages by offsetting the drain or source electrode and the gated
channel. This creates an ungated semiconductor region in series with a gated
semiconductor region, which limits the voltage dropped across the latter
region. The excess voltage is then dropped across the ungated semiconductor
thus enabling high voltage operation.
Applications for this technology include high voltage technologies requiring a flexible substrate; for example, medical devices or electric cars.
FETs are widely used as pixel addressing elements. However many applications of FETs require drive voltages larger than 100 V with relatively small input voltages.
To combat the problems associated with FETs, a high voltage field effect
transistor has been fabricated using thin-film organic semiconductor
technology. High driving voltages are
achieved by offsetting the drain or source electrode from the gate creating an
un-gated semiconductor region in series with a gated semiconductor region. This
achievement represents the first demonstration of integrated high voltage thin
film transistors based on an organic semiconductor technology with a low
temperature (< 95 degrees Fahrenheit), completely lithographic manufacturing
process that is compatible with both rigid and flexible substrates.
Achieves high output voltage with organic semiconductor
Uses a low temperature (<95 degrees Fahrenheit) process
for manufacturing, potentially enabling low cost roll-to-roll printing
Compatible with both rigid and flexible substrates