Synthesis and Transfer of Transition Metal Disulfide Layers on Diverse Surfaces

Technology #15898

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 FIG. 1 is a schematic diagram of an experimental setup for the synthesis of a MS2 monolayer.  FIG. 2 a provides an illustration of the chemical structure of PTAS (right) and a schematic picture for the growth process on diverse surfaces (left).  FIG. 2 b plots the temperature dependence of the weight loss and differential weight loss of PTAS using thermogravimetry analysis (TGA).  FIG. 2 c provides an SEM image of MoS2 grown on the cleaved side-wall of a Si substrate.  FIG. 2 d provides an SEM image of WS2 grown on the cleaved side-wall of a Si substrate.  FIG. 2 e provides an SEM image of monolayer MoS2 on a 5 μm Si particle.  FIG. 2 f provides an SEM image of monolayer MoS2 on aggregates of TiO2 nanoparticles.  FIG. 2 g provides an SEM image of monolayer MoS2 on sapphire.  FIG. 2 h is an optical microscope (OM) image of monolayer MoS2 on quartz. FIG. 3 a is an AFM image of the surface of a SiO2/Si substrate prior to seed treatment.  FIG. 3 b is an AFM image of the surface of the substrate of FIG. 3 a after seed treatment and after the same heating procedures as used in the growth of MoS2.  FIG. 3 c is an AFM image of the surface of the substrate of FIG. 3 b after a WS2 monolayer is formed thereon.  FIG. 3 d is an AFM image of the surface of the substrate of FIG. 3 c after removal of the as-grown MoS2 monolayer. FIG. 4 a plots nano-AES spectra for the as-grown MoS2 on silicon particles and on an aggregation of TiO2 nanoparticles.  FIG. 4 b is an SEM image of the as-grown MoS2 on a silicon particle.  FIG. 4 c is an SEM image of the as-grown MoS2 on an aggregation of TiO2 nanoparticles.
Categories
Inventors
Professor Jing Kong
Department of Electrical Engineering and Computer Science, MIT
External Link (www.rle.mit.edu)
Lain-Jong Li
Yi-Hsien Lee
Research Laboratory of Electronics, MIT
Managed By
Jim Freedman
MIT Technology Licensing Officer - Chemicals, Instruments, Consumer Products
Patent Protection

Synthesis and Transfer of Transition Metal Disulfide Layers on Diverse Surfaces

US Patent Pending US 2014-0245946

Synthesis of Transition Metal Disulfide Layers

PCT Patent Application WO 2014-134524
Publications
Integrated Circuits Based on Bilayer MoS2 Transistors
Nano Letters, Vol. 12 (9), pp 4674–4680, 2012
Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition
IEEE International Electron Devices Meeting, 2012
van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
Nano Letters, Vol. 12 (6), 2784-2791, 2012

Applications

Layered transition metal dichalcogenides (LTMD), such as MS2, have applications in flexible electronics and optoelectronics, hybrid heterostructures with 2D materials, advanced semiconductor devices and integrated circuits, short-channel devices, valleytronics devices, battery and supercapacitors, and energy harvesting issues such as water splitting and hydrogen production.

Problem Addressed

The synthesis of high-quality LTMD monolayers remains a great challenge. Additionally, a robust transfer technique to avoid degradation in quality and contamination is essential for fundamental physics and optoelectronic applications. The inventors directly synthesize high-quality MS2 monolayers on various surfaces using a scalable APCVD process and seeding techniques. Not only is the growth successful for surfaces of different materials but the deposition is applicable for surfaces with various morphology. The as-synthesized MS2 monolayer exhibits single crystalline structure with a specific flake shape even on amorphous surfaces.

Technology

Aromatic molecules, including reduced graphene oxide (r-GO), PTCDA, and PTAS are used as a seeding layer on diverse surfaces. The aromatic seeds are suspended or solute in DI water and the optimized concentration for growth of MoS2 monolayer is increased with growth temperature. Prior to the surface treatment, the samples are cleaned with piranha solution for making surface. Prior to the synthetic process, the substrates are treated with the seeds solution. A monolayer of 

MoS2, or some metal dichalcogenide, is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromativ molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate using PDMS and a tiny droplet of DI water.

Advantages

  • Numerous novel performances and unique optical properties are observed on the LTMD monolayer 
  • Direct growth of LTMD monolayer on divers surface nanostructures 
  • Scalable fabrication of high-quality LTMD monolayer 
  • Simple and low cost
  • Low growth temperature
  • No limitation on substrate