Graphene oxide sheets processed using this invention can be applied to a wide range of electronic and photonic devices such as computer chips, flexible electronics, photovoltaics, and batteries.
Current synthesis methods for graphene oxide sheets typically create structural disorder that result in large band gaps and low electrical conductivity. This post-processing technology reduces the band gap and improves electrical conductivity, making the graphene oxide sheets more suitable for devices.
This technology improves the properties of graphene oxide sheets for device applications by annealing the sheets at low temperatures (less than 125 °C). During annealing, distinct regions of oxidized and graphitic regions develop on the sheets as oxygen atoms diffuse through the graphene plane. This does not reduce the oxygen content of the sheet but this phase separation drastically increases electrical conductivity (by up to 4 orders of magnitude) and reduces the band gap to improve the absorption of visible light. The sheet's final properties can be adjusted by changing the annealing temperature and time so this technology can be adapted to a wide range of applications.
- Scalable for commercial manufacturing
- Cheap and easy post-processing that is applicable to a wide range of applications
- Preserves oxygen levels within the graphite oxide sheets